Cross-section of electrical impact excitation in bulk n-type monocrystalline Al:Cr:ZnSe
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Optical excitation cross section of erbium in GaN.
Epilayers of erbium-doped GaN (GaN:Er) were synthesized by metal-organic chemical vapor deposition, and the optical excitation cross section (σ(exc)) of Er ions in this host material were determined. Photoluminescence (PL) measurements were made using laser diodes at excitation wavelengths of 375 and 405 nm, and the integrated emission intensity at 1.54 μm was measured as a function of excitati...
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Absolute cross section for Si„3s S ̃3s3p P... electron-impact excitation
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ژورنال
عنوان ژورنال: Optical Materials Express
سال: 2020
ISSN: 2159-3930
DOI: 10.1364/ome.402399